LL4154 [BL Galaxy Electrical]
SMALL SIGNAL SWITCHING DIODE; 小信号开关二极管
| 型号： | LL4154 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SMALL SIGNAL SWITCHING DIODE |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
LL4154
BL
REVERSE VOLTAGE : 25 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
FEATURES
MINI-MELF
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Cathode indification
MECHANICAL DATA
±
0.4 0.1
3.4 +0.3
Case: MINI-MELF,glass case
-0.1
Polarity: Color band denotes cathode
Weight: 0.031 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
25
MAXIMUM RATINGS
UNITS
LL4154
25
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
VR=0V
V
V
VR
VRM
35
mA
IF(AV)
1501)
Forw ard surge current @ tP=1m s
2.0
A
mW
IFSM
Ptot
TJ
5001)
Pow er dissipation
@ T =
25
A
Junction temperature
Storage temperature range
1)Valid provided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
175
-55 --- +175
TSTG
ELECTRICAL CHARACTERISTICS
MIN
-
TYP
-
MAX
1.0
UNITS
V
Forw ard voltage @ IF=30mA
Leakage current
VF
@ VR=25V
@ VR=25V TJ=150
-
-
-
-
-
-
100
100
nA
μA
pF
IR
IR
Capacitance
@ V =0V,f=1MH ,VHF=50mV
CJ
4.0
z
Reverse breakdownRvoltage
tested with 5μA pulses
35
-
-
V
V(BR)R
trr
Reverse recovery time
fromIF=10mA to IR=10mA to IR=1mA
fromIF=10mA to IR=1mA, VR=6V. R =100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,VRF=2V
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
-
-
4
2
ns
ns
K/W
-
L
5001)
RθJA
0.45
-
-
ηv
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Document Number 0268025
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
LL4154
FIG.1 -- ADMISSIBLEPOWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
103
mW
1000
900
800
102
10
700
Ptot
600
TJ=100
IF
500
400
TJ=25
1
300
200
100
10-1
10-2
0
℃
0
100
200
TA
0
1
2V
VF
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
tp
T=1/fp
IFRM
IFRM
10
n=0
T
0.1
0.2
1
0.5
0.1
10 -5
10 -4
10 -3
10 -2
10 -1
1
10S
tp
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BLGALAXY ELECTRICAL
2.
Document Number 0268025
RATINGS AND CHARACTERISTIC CURVES
LL4154
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ VOLTAGE
1.1
TJ=25
f=1MHz
1.0
0.9
0.8
D.U.T.
60
Ctot(VR)
Ctot(OV)
VRF=2V
2nF
5K
VO
0.7
0
2
4
6
8
1 0V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
4
4
10
℃
f=1MHz
TJ=25
3
3
10
10
r
F
2
2
10
10
10
10
VR=50V
1
1
-2
-1
2
0
100
200℃
mA
10
10
1
10
10IF
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3.
BLGALAXY ELECTRICAL
Document Number 0268025
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